Design Engineer- (Standard and Custom Cell Characterization) -HBM

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications.

Our modern builds use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization.

It aims to deliver the lowest power per bit solutions in the industry. Micron is seeking a Design Infrastructure Engineer to build, enable, and scale characterization infrastructure and deliver generated IP to multiple advanced memory and logic developments. This position includes characterizing both standard and custom cells across various process technologies.

These encompass Micron internal nodes as well as external foundries, such as TSMC. The position supports multiple HBM product lines, including HBM DRAM dies, Logic dies (JEDEC and custom variants), and advanced 3D HBM architectures. You will work where circuit build, EDA infrastructure, and silicon validation readiness meet.

You will develop robust, scalable, and high-quality characterization flows.